Charged EVs | Cambridge GaN Devices raises $32 million to expand power semiconductor production

Cambridge GaN Devices (CGD), a spinout from Cambridge University in the UK, has secured $32 million in Series C financing to expand its operations in the UK, North America, Taiwan and Europe.

The investment was led by an unnamed strategic investor and included participation from British Patient Capital as well as existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group and IQ Capital.

The company develops energy-efficient power semiconductors using gallium nitride (GaN) for electric vehicles and data centers. Gallium nitride-based devices offer faster switching speeds, lower energy consumption and more compact designs than traditional silicon-based devices.

CGD says its monolithic ICeGaN technology, which simplifies the implementation of GaN into existing and progressive designs, delivers efficiency levels exceeding 99%, enabling energy savings of up to 50% in a range of high-power applications.

The company has worked with French public research and training organization IFP Energies nouvelles (IFPEN) to develop a demonstration confirming the suitability of its ICeGaN 650 V gallium nitride integrated circuits (ICs) in a multi-level, 800 VDC inverter.

“This funding round validates our technology and vision to revolutionize the power electronics industry with efficient GaN solutions and make sustainable power electronics possible. We’re now poised to accelerate our growth. We look forward to collaborating with our strategic investor to penetrate the automotive market.”

Source: Cambridge GaN Devices