Charged EVs | ROHM launches 650 V GaN high-electron-mobility transistors for automotive applications

Japanese electronic parts manufacturer ROHM Semiconductor has released GNP2070TD-Z 650 V GaN high-electron-mobility transistors (HEMTs) in the TO-Leadless (TOLL) package.

The TOLL package, which features a compact design with high heat dissipation, current capacity and switching performance, is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems.

ROHM has outsourced package manufacturing for the HEMTs to ATX Semiconductor, a Chinese outsourced semiconductor assembly and test (OSAT) provider. ROHM plans to partner with ATX to produce automotive-grade GaN devices.

ROHM began mass production of its first-generation 650 V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650 V GaN HEMT in a single package. ROHM has developed the new product incorporating second-generation elements in a TOLL package and added it to the DFN8080 package to strengthen ROHM’s 650 V GaN HEMT package lineup.

The new products integrate GaN-on-Si chips in a TOLL package, achieving values in the device metric that correlates ON-resistance and output charge (RDS(on) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.

In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to introduce automotive-grade GaN devices by strengthening its partnerships, in addition to advancing its own development efforts.

“Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market,” said Satoshi Fujitani, General Manager, AP Production Headquarters, ROHM. “Going forward, we will continue to enhance the performance of GaN devices to promote greater miniaturization and efficiency in a variety of applications.”

Source: ROHM